1Gb Ddr3 Sdram; Hynix H5Tq1G63Dfr - Hitachi 55HK6T64U Service Manual

7. 1GB DDR3 SDRAM

HYNIX H5TQ1G63DFR

Description
The H5TQ1G63DFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous
DRAM, ideally suited for the main memory applications which requires large memory density and high
bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and
falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK
(falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling
edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
Features

DQ Power & Power supply : VDD & VDDQ = 1.5V +/- 0.075V

DQ Ground supply : VSSQ = Ground

Fully differential clock inputs (CK, CK) operation

Differential Data Strobe (DQS, DQS)

On chip DLL align DQ, DQS and DQS transition with CK transition

DM masks write data-in at the both rising and falling edges of the data strobe

All addresses and control inputs except data, data strobes and data masks latched on the rising edges of
the clock

Programmable CAS latency 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported

Programmable additive latency 0, CL-1, and CL-2 supported

Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10

Programmable burst length 4/8 with both nibble sequential and interleave mode

Programmable PASR(Partial Array Self-Refresh) for Digital consumer Applications.

Programmable BL=4 supported (tCCD=2CLK) for Digi-tal consumer Applications.

Programmable ZQ calibration supported

BL switch on the fly

8banks

8K refresh cycles/64ms

JEDEC standard 96ball FBGA(x16)

Driver strength selected by EMRS

Dynamic On Die Termination supported

Asynchronous RESET pin supported

Auto Self Refresh supported

Write Levelization supported

On Die Thermal Sensor supported

8 bit pre-fetch
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