Huawei ETP4830-A1 User Manual page 66

Embedded power
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ETP4830-A1 Embedded Power
User Manual
Category
Others
Structure
Issue 10 (2017-08-08)
Item
Radiated emission
(RE)
Harmonic
Fluctuation and
blinking
ESD
Electrical fast
transient (EFT)
Radiated
susceptibility (RS)
Conducted
susceptibility (CS)
SURGE
DIP
Safety and regulatory
design
Mean time between
failures (MTBF)
Dimensions (H x W x
D)
Weight
Protection level
Installation mode
Huawei Proprietary and Confidential
Copyright © Huawei Technologies Co., Ltd.
A Technical Specifications
Specifications
CISPR 22/EN 55022 Class B
IEC 61000-3-2
IEC 61000-3-3
Enclosure port: Contact discharge voltage: 6
kV (Class B); air discharge voltage: 8 kV
(Class B);
Signal port: Contact discharge voltage: 2 kV
(Class R)
The voltage at signal ports is 1 kV, and the
voltage at the power ports is 2 kV (criterion
B).
Level 3; criterion: A; field strength: 10 V/m
Signal port: 3 V (criterion A); power port:
10 V
(For the AC power port) differential
mode: ± 2 kV; common mode: ± 4 kV
(criterion B)
(For the DC power port) differential
mode: ± 2 kV/2 ohms; common mode: ± 2
kV/12 ohms, ± 4 kV/12 ohms (+48 V and
PE are short-circuited); isolation
protection enabled, criterion B
(For internal signal cables) differential
mode: ± 0.5 kV; common mode: ± 1 kV;
waveform: 8/20(1.2/50) µs, criterion B
(For external signal cables) differential
mode: ± 2 kV; common mode: ± 4 kV;
waveform: 8/20(1.2/50) µs, criterion B
EN61000-4-11
Complies with IEC/EN60950-1/GB 4943
and passes TUV and CE.
250,000 hours
43.6 mm x 442 mm x 255 mm
≤10 kg (with rectifiers)
IP20
Adapts to 19-inch cabinets and ETSI
58

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