Panasonic 2SC2406 Specification Sheet

Transistors
2SC2406
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1035
 Features
 Low noise voltage NV
 High forward current transfer ratio h
 Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Merking symbol
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
V 55
CBO
V 55
CEO
V 5
EBO
I 50
C
I 100
CP
P 200
C
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 10 mA, I
CBO C
V I = 2 mA, I
CEO C
V I = 10 mA, I
EBO E
V V = 1 V, I
BE CE
I V = 10 V, I
CBO CB
I V = 10 V, I
CEO CB
h V = 5 V, I
FE CE
V I = 100 mA, I
CE(sat) C
f V = 5 V, I
T CB
V = 10 V, I
CB
NV
R = 100 kΩ, Function = FLAT
g
R S
180 to 360 260 to 520
TR TS
SJC00422AED
 Package
 Code
Mini3-G1
 Pin Name
1. Base
2. Emitter
3. Collector
Unit
 Marking Symbol: T
V
V
V
mA
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 100 mA
C
= 0
E
= 0
B
= 2 mA
C
= 10 mA
B
= –2 mA, f = 200 MHz
E
= 1 mA, G = 80 dB,
C V
T
360 to 700
TT
Min Typ Max Unit
55
55
5
0.7 1.0
0.1
1
180 700
0.6
200 MHz
110 mV
V
V
V
V
mA
mA

V
1