Panasonic 2SC4626J Specification Sheet

Transistors
2SC4626J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common-emitter reverse transfer
capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Product of no-rank is not classified and have no indication for rank.
Publication date: December 2002
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 30
CBO
V 20
CEO
V 5
EBO
I 30
C
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
*
h V
FE CB
f V
T CB
NF V
CB
Z V
rb CB
C V
re CB
B C
70 to 140 110 to 220
Unit
V
V
V
mA
mW
°C
Marking Symbol: V
°C
Conditions
= 10 V, I = 0
E
= 10 V, I = −1 mA
E
= 10 V, I = −1 mA, f = 200 MHz
E
= 10 V, I = −1 mA, f = 5 MHz
E
= 10 V, I = −1 mA, f = 2 MHz
E
= 10 V, I = −1 mA, f = 10.7 MHz
E
No-rank
70 to 220
SJC00281BED
+0.05
1.60
–0.03
0.12
1.00 ±0.05
3
1 2
0.27 ±0.02
(0.50)(0.50)
5˚
SSMini3-F1 Package
Min Typ Max
0.1
70 220
150 250
2.8 4.0
22 50
0.9 1.5
Unit: mm
+0.03
–0.01
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
Unit
µA

MHz
dB
Ω
pF
1