Toshiba 20VL44 Service Manual page 54

Si9933ADY
Dual P-Channel PowerTrench
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor's advanced
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
Absolute Maximum Ratings
Symbol
V Drain-Source Voltage
DSS
V Gate-Source Voltage
GSS
I Drain Current
D
P
Power Dissipation for Dual Operation
D
Power Dissipation for Single Operation
T , T Operating and Storage Junction Temperature Range
J STG
Thermal Characteristics
R Thermal Resistance, Junction-to-Ambient
θJA
R Thermal Resistance, Junction-to-Case
θJ C
Package Marking and Ordering Information
Device Marking
9933A
©2001 Fairchild Semiconductor International
® ®
MOSFET
PowerTrench
o
T =25 C unless otherwise noted
A
Parameter
– Continuous
– Pulsed
Device Reel Size
Si9933ADY 13''
Features
• –5 A, –20 V, R
DS(ON)
R
DS(ON)
R
DS(ON)
• Extended V
range (±12V) for battery applications
GSS
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
5
Q1
6
7
Q2
8
Ratings
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
–55 to +175
(Note 1a)
(Note 1)
Tape width
12mm
January 2001
= 75 mΩ @ V = –4.5 V
GS
= 105 mΩ @ V = –3.0 V
GS
= 115 mΩ @ V = –2.7 V
GS
4
3
2
1
Units
–20
V
±12
V
–3.4
A
–16
W
2
1.6
1
0.9
°C
°C/W
78
°C/W
40
Quantity
2500 units
Si9933ADY Rev A(W)