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130nm node CMOS Process (CS90A)
Transistor
Interconnect
FUJITSU MICROELECTRONICS AMERICA, INC.
Corporate Headquarters
1250 E. Arques Ave. Sunnyvale, CA 94088-3470
Tel: (800) 866-8608 Fax: (408) 737-5999
E-mail: inquiry@fma.fujitsu.com Web Site: http://www.fma.fujitsu.com
Al
SiLK
SiO2
SRAM
1.65µm
Cell Size =
1.98µm
(1.2µm x 1.65µm)
(2nd Generation SRAM)
Global Metal:
Al
AL (Fuse & Pad)
Pitch: 1.8µm
7-Cu
Semi Global Metal:
6-Cu
Thick Cu + SiO2
Pitch: 0.6µm
5-Cu
4-Cu
3-Cu
Intermediate Metal:
Thin Cu + SiLK
2-Cu
Pitch: 0.4µm
1-Cu
©2003 Fujitsu Microelectronics America, Inc.
All company and product names are trademarks or
registered trademarks of their respective owners.
Printed in the U.S.A. WFS-FS-20983-7/2003
2
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