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Philips Semiconductors
Triacs
Ptot / W
8
7
6
1
5
4
3
2
1
0
0
1
2
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
, where
T(RMS)
ITSM / A
1000
100
dI /dt limit
T
T2- G+ quadrant
10
10us
100us
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
sinusoidal currents, t
ITSM / A
30
25
20
15
10
5
0
1
10
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
TSM
sinusoidal currents, f = 50 Hz.
August 1997
BT136
Tmb(max) / C
101
104
= 180
107
120
110
90
60
113
30
116
119
122
125
3
4
5
, versus rms
tot
= conduction angle.
BT136
I TSM
I
T
T
time
Tj initial = 25 C max
1ms
10ms
100ms
T / s
, versus pulse width t
, for
p
20ms.
p
BT136
I TSM
I
T
time
T
Tj initial = 25 C max
100
1000
IT(RMS) / A
5
4
3
2
1
0
-50
0
Fig.4. Maximum permissible rms current I
versus mounting base temperature T
IT(RMS) / A
12
10
8
6
4
2
0
0.01
0.1
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; T
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
Fig.6. Normalised gate trigger voltage
V
(T
)/ V
(25˚C), versus junction temperature T
GT
j
GT
3
Product specification
BT136 series
BT136
107 C
50
100
Tmb / C
T(RMS)
.
mb
BT136
1
surge duration / s
107˚C.
mb
BT136
50
100
Tj / C
Rev 1.200
150
,
10
150
.
j
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