Philips BLF278 Datasheet page 19

Philips Semiconductors
VHF push-pull power MOS transistor
2
handbook, halfpage
z i
( )
1
0
1
–2
150
Class-AB operation; V = 50 V; I
DS
R = 2.8 (per section); P
GS
Fig.23 Input impedance as a function of frequency
(series components); typical values per
section.
handbook, halfpage
Z i
Fig.25 Definition of MOS impedance.
2003 Sep 19
MGE611
r i
x i
200 250
f (MHz)
= 2 0.5 A;
DQ
= 250 W.
L
Z L
MBA379
3
handbook, halfpage
Z L
( )
2
1
0
150
Class-AB operation; V
DS
R = 2.8 (per section); P
GS
Fig.24 Load impedance as a function of frequency
(series components); typical values per
section.
20
handbook, halfpage
G p
(dB)
10
0
150
Class-AB operation; V
DS
R = 2.8 (per section); P
GS
Fig.26 Power gain as a function of frequency;
typical values per section.
19
Product Specification
BLF278
MGE625
X L
R L
200
f (MHz)
= 50 V; I = 2 0.5 A;
DQ
= 250 W.
L
MGE624
200
f (MHz)
= 50 V; I = 2 0.5 A;
DQ
= 250 W.
L
250
250