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Panasonic MA3X720 (MA720) Specification Sheet
Panasonic MA3X720 (MA720) Specification Sheet

Panasonic MA3X720 (MA720) Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA3X720
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
possible
• Optimum for high frequency rectification because of its short
reverse recovery time t
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: December 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA720)
= 500 mA rectification is
F(AV)
rr
and good rectification efficiency
F
= 25°C
a
Symbol
Rating
V
40
R
V
40
RM
I
500
F(AV)
I
2
FSM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F
F
I
V
R
C
V
t
t
I
rr
F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
EIAJ: SC-59
mA
Marking Symbol: M2W
A
Internal Connection
°C
°C
Conditions
= 500 mA
= 35 V
R
= 0 V, f = 1 MHz
R
= I
= 100 mA
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00079EED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min
Typ
Max
0.55
60
5
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr
R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
100
pF
ns
1

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Summary of Contents for Panasonic MA3X720 (MA720)

  • Page 1 Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type For high frequency rectification ■ Features • Forward current (Average) I F(AV) possible • Optimum for high frequency rectification because of its short reverse recovery time t • Low forward voltage V and good rectification efficiency ■...
  • Page 2 MA3X720  V 25°C = 100°C −20°C −1 −2 ( V ) Forward voltage V  T = 15 V −40 ( °C ) Ambient temperature T  V = 100°C 25°C ( V ) Reverse voltage V  V ( V ) Reverse voltage V SKH00079EED...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

This manual is also suitable for:

Ma720