Karl Suss MA6 Operating Manual

Mask aligner
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NANOSYSTEM FABRICATION FACILITY (NFF), HKUST
Standard Operating Manual
___________________________________________________________
Karl Suss MA6 Mask Aligner
Version 1.1
Page 1 of 24

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Summary of Contents for Karl Suss MA6

  • Page 1 NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Standard Operating Manual ___________________________________________________________ Karl Suss MA6 Mask Aligner Version 1.1 Page 1 of 24...
  • Page 2: Table Of Contents

    2.4 Alignment Accuracy 2.5 Resolution 3. Contact List and How to Become a Qualified User 3.1 Emergency Response and Communications 3.2 Training to Become a Qualified MA6 User 4. Operating Procedures 4.1 System Description 4.2 Safety Warnings 4.3 Operation Precautions and Rules 4.4 Initial Status checks...
  • Page 3: Picture And Location

    This tool is located at NFF Room 2240 Cleanroom Class 100. Process Capabilities 2.1 Cleanliness Standard: Suss MA6#1 Mask Aligner is classified as a “Non-Standard” equipment; Suss MA6#2 Mask Aligner is classified as a “Clean/Semi-Clean”. to 2”, or 4”; BSA is 2” or 4”...
  • Page 4: Contact List And How To Become A Qualified User

    4. NFF Senior Technician: Mr. Henry YEUNG 2358-7896 5. NFF Technician: Mr. Charles TANG 23587896 3.2 Training to Become a Qualified MA6 User Please follow the procedure below to become a qualified user. 1. Read through the on-line equipment operating manual of the equipment;...
  • Page 5: Operating Procedures

    1. The Karl Suss MA6 is a top and bottom side mask aligner used for fine lithography down to 1 micron or below. 2. 350 W mercury arc lamp i-line (365nm) with "smart power supply" is capable of operating in constant power mode, or constant intensity mode.
  • Page 6 NANOSYSTEM FABRICATION FACILITY (NFF), HKUST assemblies. Bottom side alignment using bottom viewing optics, CCD imaging with image frame grabber and LCD display. This allows registration of features on the backside of a wafer to the topside of the same wafer. 4.
  • Page 7: Safety Warnings

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Flood Exposure: It is possible to exposure the whole wafer without a mask. After this mode is selected, the exposure can be started from the initial state by pressing the “EXPOSURE” key. The exposure takes place as long as the exposure time was set independent if a mask (and mask holder) is loaded or not.
  • Page 8: Operation Precautions And Rules

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST of the machine. Only use the EMO in emergency situations. Emergency situations are where injury of personnel or serious damages of the system impends immediately. 13. In case of fire, keep calm, sound the alarm. If the machine hasn’t shut down, press EMO Button to shut down the machine and notice NFF staff and UST security.
  • Page 9: Initial System Checks

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST slot by your own. 3. Please check-in the equipment on your own according to the reserved time slot. If you haven’t check-in, “Loss of wafer vacuum! Confirm with ENTER” error message will be displayed during process. 4.
  • Page 10: Modify Parameters

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Press “START” key. This will ignite the exposure lamp. LED LAMP LIFE/POWER is flashing until lamp warming up is finished. 2. Powering on the electronic Wait for around 10 minutes let the lamp stable. Turn the POWER SWITCH ELECTRONIC on the upper panel control clockwise into ON position and release.
  • Page 11: Mask Loading

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Select exposure mode: “EDIT PARAMETER” key Press “EDIT PARAMETER” key to toggle with the “X-Arrow” key to expose mode, select with the “Vacuum, Low Vacuum, Hard, Soft, Proximity or Flood-E” by the “Y-ARROW” key. Edit parameters: “EDIT PARAMETER” key Press “EDIT PARAMETER”...
  • Page 12 NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 1. If MA6 is not already in the “CHANGE MASK” mode. “CHANGE MASK” and “ENTER” keys do not flash. Press ““CHANGE MASK” key. 2. Take out the mask holder, flip it 180 and put it on the left compartment. If a mask is loaded, verify on LCD display that vacuum is still on before pulling out tray.
  • Page 13 NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Alignment Pins Leaf spring 5. Toggle the mask vacuum on by press flashing “ENTER” key. Activate the mechanical mask clamp by pressing the leaf spring down. Verify vacuum is on before turning mask plate over. (Use hand should unable to move the mask). 6.
  • Page 14: Wafer Loading

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST mask holder is inverted. The vacuum should always be ON before the mask holder is inverted; otherwise the mask will drop and possibly break. 4.9 Wafer Loading There are two wafer chucks, one for 4 inch substrates and the other one for pieces (1.5cm to 2 inch).
  • Page 15 NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 4. Verify the chuck and check red vacuum seal are clean from stains or particles. Use Nitrogen blow gun to remove particles or IPA (Isopropyl Alcohol) with a clean wiper to remove stains if needed. 5.
  • Page 16: Top Side Alignment

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST start the alignment (if it is not already down). 10. The machine instructs: “Align Substrate”. 4.10 Top Side Alignment (TSA) The wafer is aligned to the mask using the topside alignment microscope (TSA). If the microscope is not lowered automatically press “F1” key, confirm with “ENTER” key.
  • Page 17 NANOSYSTEM FABRICATION FACILITY (NFF), HKUST The objectives position over the mask using the “X-Y” arrow keys. The fast speed movement of the microscope may be obtained by pressing “Fast” Key LED on. An actual TSA-microscope image on the monitor is enabled by turning the “SPLITFIELD”...
  • Page 18 TSA microscope front (TSA-Q-MOVEMENT). The MA6 has the ability to remember microscope position via the “Set reference” key. Simply use x-y arrow keys (fast mode may be used if desired) to position microscope.
  • Page 19: Wafer Alignment

    STG-X-Movement Micrometer Screw STG-Y-Movement Micrometer Screw With MA6 in alignment mode, and view in split field mode (if wafers already have a pattern), straighten wafer by turning rotation R knob. Rotate X and Y alignment knobs to align substrate alignment mark central symmetrical to the mask alignment mark.
  • Page 20: Wafer Exposure

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST contact modes. Use the “Alignment/Cont” key instead. Press “ALIGNMENT CHECK” key again to exit this mode, and if alignment is acceptable, proceed to expose wafer section. 4.12 Wafer Exposure Lamp power supply should be in CH1 (Constant Intensity @365nm) mode. The current system intensity setting value is shown in front of the machine.
  • Page 21: Mask Unloading

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 4.13 Mask Unloading 1. Press “CHANGE MASK” key, this key and “ENTER” key will flash, mask holder will be released. 2. If the microscope is not lifted automatically press “F1” key, confirm with “ENTER” key to raise it to up position. 3.
  • Page 22 BSA microscope Grab Image Verify MA6 idle mode and start up machine as describe above. Select desired contact mode and parameter setting as described above. Make sure no wafer is on the wafer chuck. Use “UNLOAD” key as previously described if necessary.
  • Page 23: Process Recording During The Process

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST fine focus separately with the “TOP SUBSTRATE LEFT/RIGHT” regulators get a sharp image on LCD monitor. Bottom microscope position may be read from the LCD. Xl= left objective x position; Xr = right objective x position, Yl= left objective Y position, etc. Rotation is accomplished by moving one objective relative to the other.
  • Page 24: Clean Up

    NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 2. Write down any problems or comments in the log sheets. 4.16 Clean up Clean the chuck and make sure everything is back to the original place. 4.17 Check out Check out the equipment in the NFF equipment reservation website or Card Reader after use.

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