Page 1
This product complies with the RoHS Directive (EU 2002/95/EC). Multi Chip Discrete UP05C8GG Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits Features Two elements incorporated into one package (Tr + CCD load device) ...
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC). UP05C8GG Electrical Characteristics T = 25°C±3°C Tr Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Transition frequency Power gain Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Page 3
( V ) Drain-source voltage V UP05C8G_ V CE(sat) I CE(sat) = 10 = 85°C 25°C −25°C 0.01 Collector current I (mA) SJJ00400BED UP05C8GG UP05C8G_ h I = 10 V = 85°C 25°C −25°C Collector current I (mA)
Page 4
This product complies with the RoHS Directive (EU 2002/95/EC). UP05C8GG SSMini6-F2 1.60 ±0.05 0.20 (0.5) 1.00 ±0.05 (5°) +0.05 − 0.02 (0.5) SJJ00400BED Unit: mm +0.05 0.13 − 0.02...
Page 5
Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.