Panasonic Switching Diodes MA2Z001 Specifications

Switching Diodes
MA2Z001
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: V
• Small terminal capacitance C
• Suitable for high-density mounting
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Repetitive peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. * : t measurement circuit
rr
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 200 V
R
t
= 25°C
a
Symbol Rating
V 200
R
V 250
RRM
I 100
F(AV)
I 225
FRM
I 500
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
= 200 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
= I
t I
rr F
= 1 mA , R
I
rr
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKF00016BED
5˚
Unit
V
V
mA
mA
1 : Anode
2 : Cathode
mA
EIAJ : SC-76
Marking Symbol: 1K
°C
°C
Conditions
= 10 mA
R
= 100 Ω
L
Input Pulse
t
t
r p
t
10%
I
F
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
1.25 ±0.1 0.7 ±0.1
0.35 ±0.1
1
0 to 0.1
2
+0.1
0.16
0.5 ±0.1
–0.06
SMini2-F1 Package
Min Typ Max
1.2
1.0
3.0
60
Output Pulse
t
rr
t
= 1 mA
I
rr
= I = 10 mA
I
F R
= 100 Ω
R
L
Unit: mm
Unit
V
µA
pF
ns
1