Panasonic Schottky Barrier Diodes MA6J786Y Specifications

Schottky Barrier Diodes (SBD)
MA6J786Y
Silicon epitaxial planar type
For high speed switching circuits
 Overview
MA6J786Y is optimal for general circuit supplies.
The assembly of 3 MA3X786 elements in parallel in one package.
 Features
 Forward current (Average) I
F(AV)
 Short reverse recovery time t
 Low forward voltage V and good rectification efficiency
F
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward surge
current *
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
* 1
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current
from the operating equipment.
3. * 1: t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: August 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 100 mA rectification is possible
, optimum for high-frequency rectification
rr
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 100
F(AV)
I 300
FM
I 1
FSM
T 125
j
T -55 to +125
stg
= 25°C±3°C
a
Symbol
V I = 100 mA
F1 F
I V = 30 V
R R
C V = 0, f = 1 MHz
t R
I = I
F
t
rr
R = 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
 Package
 Code
SMini6-F1
 Pin Name
 Marking Symbol: M8C
Unit
V
 Internal Connection
V
mA
mA
A
°C
°C
Conditions
= 100 mA, I = 0.1 × I ,
R rr R
Input Pulse
t t
r p
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
SKH00227BED
1: Cathode 1 4: Anode 3
2: Cathode 2 5: Anode 2
3: Cathode 3 6: Anode 1
(A1) (A2) (A3)
6 5 4
1 2 3
(C1) (C2) (C3)
Min Typ Max
0.55
15
20
1.0
Output Pulse
t
rr
I
F
t
I = 10 mA
rr
I = I = 100 mA
F R
R = 100 Ω
L
Unit
V
mA
pF
ns
1