Panasonic Schottky Barrier Diodes MA2SD250G Specifications

Schottky Barrier Diodes (SBD)
MA2SD250G
Silicon epitaxial planar type
For super high speed switching
■ Features
• Forward current (Average) I
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 200 mA rectification is possible
F(AV)
= 25°C
a
Symbol Rating
V 15
R
V 15
RRM
I 200
F(AV)
I 300
FM
I 1
FSM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
t
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
Unit
■ Marking Symbol: 6L
V
V
mA
mA
A
°C
°C
Conditions
= 200 mA
= 6 V
R
= 1 V, f = 1 MHz
R
= I = 100 mA
R
= 10 mA, R = 100 Ω
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00179AED
SSMini2-F4
1: Anode
2: Cathode
Min Typ
20
3
Output Pulse
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Max Unit
0.39 V
µA
50
pF
ns
1