Panasonic MA3X701 Specifications

Schottky Barrier Diodes (SBD)
MA3X701
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
* 2
Reverse recovery time
Thermal resistace (j-a)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4. * 1: Guaranteed on the condition of soldered to PC board. (Cu foil 0.8 mm × 20 mm)
*2 : t measurement circuit
rr
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA10701)
= 700 mA rectification is possible
F(AV)
= 25°C
a
Symbol Rating
V 30
R
V 30
RRM
I 700
F(AV)
I 5
FSM
T 125
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 700 mA
V I
F Z
I V
R R
C V
t R
= I
t I
rr F
= 10 mA, R
I
rr
R
th(j-a)1
* 1
R
th(j-a)2
Bias Application Unit (N-50BU)
A
Pulse Generator Wave Form Analyzer
(PG-10N) (SAS-8130)
= 50 Ω = 50 Ω
R R
s i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
mA
A
EIAJ: SC-59
°C
Marking Symbol: M4P
°C
Internal Connection
Conditions
= 30 V
= 0 V, f = 1 MHz
= 100 mA
R
= 100 Ω
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00071CED
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min Typ Max
0.55
80
120
7.5
420
330
Output Pulse
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
pF
ns
°C/W
°C/W
1