Panasonic MA3DF30 Specification Sheet

Fast Recovery Diodes (FRD)
MA3DF30
Silicon Mesa type
For high frequency rectification
For plasma display panel drive
 Features
 High switching speed t
rr
 Soft recovery
 Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current T
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Reverse recovery time *
Thermal resistance (j-a)
Thermal resistance (j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. * : t measurement circuit
rr
50 Ω
Publication date: September 2007
This product complies with RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 300
RRM
V 350
RSM
= 25°C I 20
C F
* I 100
FSM
T –40 to +150
j
T –40 to +150
stg
= 25°C±3°C
a
Symbol
V I = 20 mA
F F
I V
RRM RRM
I = 0.5 A, I
F
t
rr
I = 0.25 A
rr
R
th(j-c)
R
th(j-a)
50 Ω
D.U.T
5.5 Ω
 Package
 Code
TO-220D-A1
 Pin Name
1: Anode
2: Cathode
3: Anode
Unit
V
 Marking Symbol: MA3DF30
V
A
 Intemal Connection
A
°C
°C
Conditions
= 300 V
= 1.0 A
R
I
F
I
R
SKJ00020AED
1 2 3
Min Typ Max Unit
1.3 1.4
50
15 25
3.0 °C/W
63 °C/W
t
rr
0.25 × I
R
V
mA
ns
1