Panasonic MA27111 Specification Sheet

Switching Diodes
MA27111
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• High-density mounting is possible
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. * : t measurement circuit
rr
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
I 225
FM
I 500
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
= 100 µA
V I
R R
I V
R R
C V
t R
= 10 mA, V
t I
rr F
= 0.1 I
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Unit
V
V
mA
mA
mA
Marking Symbol: S
°C
°C
Conditions
= 75 V
= 0 V, f = 1 MHz
= 6 V
R
= 100 Ω
, R
R L
Input Pulse
t
t
r p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00066BED
+0.05
+0.05
0.27
0.13
–0.02
–0.02
2
1
0.60
±0.05
5°
SSSMini2-F2 Package
Min Typ Max
0.95 1.20
80
100
0.6 2.0
3
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
1: Anode
2: Cathode
Unit
V
nA
pF
ns
1