Panasonic ESD Diodes MAZE062D Specification Sheet

ESD Diodes
MAZE062D
Silicon planar type
For surge absorption circuit
■ Features
• Low joint capacity zener diode
■ Absolute Maximum Ratings T
Parameter
Repetitive peak forward current
*
Power dissipation
Junction temperature
Storage temperature
Note) * : P = 200 mW achieved with a printed circuit board.
D
■ Electrical Characteristics T
Parameter
Forward voltage
*
Zener voltage
Zener rise operating resistance
Zener operating resistance
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. Electrostatic breakdown voltage: ±15 kV
Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Test unit: ESS-200AX
4. * : The V value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
Z
Guaranteed at 20 ms after power application.
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
I 200
FRM
P 150
D
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 mA
V I
F F
= 5 mA
V I
Z Z
= 0.5 mA
R I
ZK Z
= 5 mA
R I
Z Z
= 5.5 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
SKE00010CED
1
(0.65)
1.3
2.0
5˚
Unit
mA
mW
°C
°C
EIAJ: SC-79
Marking Symbol: 6.2C
Internal connection
Conditions
Unit: mm
+0.1
0.3 0.15
–0
3
2
(0.65)
0.9 ±0.1
±0.1
±0.2
1: Cathode 1
2: Cathode 2
3: Anode
SMini3-F1 Package
3
1 2
Min Typ Max
0.9 1.0
5.9 6.5
100
30
3
8
+0.1
–0.05
Unit
V
V
Ω
Ω
µA
pF
1