Panasonic 2SD1328 Specification Sheet

Transistors
2SD1328
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V
• Low ON resistance R
on
• High foward current transfer ratio h
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
* 3
ON resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank R
h 200 to 350
FE
Marking symbol 1DR
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
FE
= 25°C
a
Symbol Rating
V 25
CBO
V 20
CEO
V 12
EBO
0.5
I
C
1
I
CP
P 200
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V I
CBO C
= 1 mA, I
V I
CEO C
= 10 µA, I
V I
EBO E
I V
CBO CB
* 1,2 = 2 V, I
h V
FE CE
= 0.5 A, I
* 1
V I
CE(sat) C
= 0.5 A, I
* 1
V I
CE(sat) C
= 10 V, I
f V
T CB
C V
ob CB
R
ON
S T
300 to 500 400 to 800
1DS 1DT
SJC00216BED
10˚
Unit
V
V
V
A
A
Marking Symbol: 1D
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 25 V, I = 0
E
= 0.5 A
C
= 20 mA
B
= 50 mA
B
= −50 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
No-rank
200 to 800
1D
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
Mini3-G1 Package
Min Typ Max
25
20
12
100
200 800
0.13 0.40
1.2
200
10
1.0
* 3: R Measuremet circuit
on
1 kΩ
= 1 mA
I
B
V V V
B V
V
B
= × 1 000 (Ω)
R
on
− V
V
A B
Unit: mm
+0.10
0.16
–0.06
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Unit
V
V
V
nA

V
V
MHz
pF
Ω
f = 1 kHz
V = 0.3 V
A
1