Transistors
2SC5848
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2079
Features
High forward current transfer ratio h
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol
Rating
V
60
CBO
V
50
CEO
V
7
EBO
I
100
C
I
200
CP
P
100
C
T
125
j
T
–55 to +125
stg
= 25°C±3°C
a
Symbol
V
I
= 10 µA, I
CBO
C
V
I
= 2 mA, I
CEO
C
V
I
= 10 µA, I
EBO
E
I
V
= 20 V, I
CBO
CB
I
V
= 10 V, I
CEO
CE
h
V
= 10 V, I
FE
CE
V
I
= 100 mA, I
CE(sat)
C
f
V
= 10 V, I
T
CB
C
V
= 10 V, I
ob
CB
SJC00327AED
3
1.00
Unit
V
V
V
1: Base
mA
2: Emitter
3: Collector
mA
Marking Symbol : 3E
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 0
B
= 2 mA
C
= 10 mA
B
= –2 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Unit: mm
2
1
+0.01
0.39
±0.05
−0.03
0.25
0.25
±0.05
±0.05
1
3
2
0.65
0.05
±0.01
ML3-N2 Package
Min
Typ
Max
Unit
60
50
7
0.1
µA
100
µA
180
390
0.1
0.3
100
MHz
2.2
±0.03
V
V
V
V
pF
1