Panasonic 2SB1320A Specification Sheet

Transistors
2SB1320A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1991A
■ Features
• High forward current transfer ratio h
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
−60
V
CBO
−50
V
CEO
−7
V
EBO
−100
I
C
−200
I
CP
P 400
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE CE
V I
CE(sat) C
f V
T CB
C V
ob CB
Q R
160 to 260 210 to 340
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= −10 µA, I = 0
E
= −2 mA, I = 0
B
= −10 µA, I = 0
C
= −20 V, I = 0
E
= −20 V, I = 0
B
= −10 V, I = −2 mA
C
= −100 mA, I = −10 mA
B
= −10 V, I = 1 mA, f = 200 MHz
E
= −10 V, I = 0, f = 1 MHz
E
S No-rank
290 to 460 160 to 460
SJC00078BED
6.9 ±0.1
(0.7) (4.0)
0.65 max.
+0.10
0.45
–0.05
1.05 ±0.05
2.5 2.5
±0.5
±0.5
1 2 3
MT-1-A1 Package
Min Typ Max
−60
−50
−7
−1
−1
160 460
−1
80
3.5
Unit: mm
2.5 ±0.1
(0.8)
+0.10
0.45
–0.05
1: Emitter
2: Collector
3: Base
Unit
V
V
V
µA
µA

V
MHz
pF
1