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4-4.
NEW
TYPE
HEADPHONES
SECTION
(MDR-IF5)
SCHEMATIC
DIAGRAM
1
2
3
4
r=)
6
7
8
g
RI 2.2k
Bl
PPS06-1
(INFRARED SENSOR)
10
O
O
RV11
SOk
11
12
13
(vou
mn
TGA
CXA1280N
FE/BDET/POWER
Q2
28€2712
RF AMP
Qt
25K209
RF AMP
|
TO SHIELD
PAPER
@
~~
82 PP601-1
(INFRARED
SENSOR)
a
eee
IE
|
I
ee
eee Lal
BATT
(RATTERY)
NI-C8
£3 PP601-1
(INFRARE® SENSOR)
I
"a
as
a
|
C16
150p
SL
Qit
2502712
[B+]
BAND PASS
RVS1
50k
£51
HSM276S
[vot]
1 TP7 C59 [+
-01
10
o
Lol
+C52
TX]
FO
YQ
4yV
5 1007
509
i¥}
BATT2
C58
0.01
F
Q13 BICTI4YK
ia
[ RX (L)
BOARD]
|
CFS1 (2/2)
C67
'Gn
3p — et
Saf 3
—
52
50
(aE)
NI-CB
[ EF
(CHARGE
IN)
Note:
H
'@
All capacitors are in wF unless otherwise noted.
pF: uwuF
5OWV
or
less are
not
indicated
except
for electrolytics
and tantalums,
e
All
resistors
are
in Q
and
1¥/,W or
less unless
otherwise
specified.
e@
Power voltage is dc 2.5 V and fed with regulated dc power
supply from BATT TERMINAL.
AEP
Voltage
and
waveforms
are
dc
with
respect
to ground
UK
under no-signal conditions.
Destination
US
Canadian
CXA1280N
FE/DET/POWER
New Type Serial No.
47097and later
A50401 and later
46297 and later
53401 and later
23001 and later
@51 25C2712
BAND
PASS
Q53 BICI14YK
SWITCH
117501
and fater
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