Panasonic MA2J727 Specification Sheet

Schottky Barrier Diodes (SBD)
MA2J727
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• V = 50 V is guaranteed
R
• I = 200 mA rectification is possible
F(AV)
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 50
R
V 50
RRM
I 300
FM
I 200
F(AV)
I 1
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 50 V
I V
R R
= 30 mA
V I
F1 F
= 200 mA
V I
F2 F
= 0 V, f = 1 MHz
C V
t R
= I
t I
rr F
= 10 mA, R
I
rr
Bias Application Unit N-50BU
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKH00136AED
Unit
V
V
mA
mA
Marking Symbol: 2F
A
°C
°C
Conditions
= 100 mA
R
= 100 Ω
L
4. * : t measurement circuit
rr
Input Pulse
t t
r p
t
10%
I
F
90%
V
R
= 2 µs
t I
p
= 0.35 ns
t I
r
δ = 0.05
R
1.25 ±0.1 0.7 ±0.1
0.35 ±0.1
1
0 to 0.1
2
+0.1
0.16
0.5 ±0.1
–0.06
5˚
SMini2-F1 Package
Min Typ Max
200
0.36
0.55
30
3.0
Output Pulse
t
rr
t
= 10 mA
I
rr
= 100 mA
F
= 100 mA
R
= 100 Ω
L
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-76
Unit
µA
V
V
pF
ns
1