Panasonic 2SB1220G Specification Sheet

Transistors
2SB1220G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821G
■ Features
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noixe voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol Rating
−150
V
CBO
−150
V
CEO
−5
V
EBO
−50
I
C
−100
I
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CEO C
V I
EBO E
I V
CBO CB
*
h V
FE CE
V I
CE(sat) C
f V
T CB
C V
ob CB
NV V
CE
R
g
R S
130 to 220 185 to 330
Unit
V
V
V
mA
mA
mW
°C
°C
Conditions
= −100 µA, I = 0
B
= −10 µA, I = 0
C
= −100 V, I = 0
E
= −5 V, I = −10 mA
C
= −30 mA, I = −3 mA
B
= −10 V, I = 10 mA, f = 200 MHz
E
= −10 V, I = 0, f = 1 MHz
E
= −10 V, I = −1 mA, G = 80 dB
C V
= 100 kΩ, Function = FLAT
T
260 to 450
SJC00354AED
■ Package
• Code
SMini3-F2
• Marking Symbol: I
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
−150
−5
−1
130 450
−1
200
4
150
Unit
V
V
µA

V
MHz
pF
mV
1