Panasonic 2SA1790J Specification Sheet

Transistors
2SA1790J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: July 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
−30
V
CBO
−20
V
CEO
−5
V
EBO
−30
I
C
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V V
BE CE
I V
CBO CB
I V
CEO CE
I V
EBO EB
*
h V
FE CE
= −10 mA, I
V I
CE(sat) C
f V
T CB
NF V
CB
Z V
rb CB
C V
re CB
B C
70 to 140 110 to 220
Unit: mm
Unit
V
V
V
EIAJ: SC-89
mA
SSMini3-F1 Package
mW
Marking Symbol: E
°C
°C
Conditions
= −10 V, I = −1 mA
C
= −10 V, I = 0
E
= −20 V, I = 0
B
= −5 V, I = 0
C
= −10 V, I = −1 mA
C
= −1 mA
B
= −10 V, I = 1 mA, f = 200 MHz
E
= −10 V, I = 1 mA, f = 5 MHz
E
= −10 V, I = 1 mA, f = 2 MHz
E
= −10 V, I = 1 mA, f = 10.7 MHz
E
SJC00291AED
+0.05
1.60
–0.03
0.12
1.00 ±0.05
3
1 2
0.27 ±0.02
(0.50)(0.50)
5˚
Min Typ Max
− 0.7
− 0.1
−100
−10
70 220
− 0.1
150 300
2.8 4.0
22 50
1.2 2.0
+0.03
–0.01
1: Base
2: Emitter
3: Collector
Unit
V
µA
µA
µA

V
MHz
dB
Ω
pF
1