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6
5
4
NOTE:
The indicated semiconductors ar(
only. Other alternatiue semiconduc
are listed in the parfs llsf.
s t o t , 2 o l
s 3 0 l
T 3 0 l
lto?r2o2
L 3 0 l
R Y 3 0 I
L r O t , 2 O I
-|
I C I O r
8 A 3 2 8
l c 1 0 ?
P M 9 0 0 2 B
r c 1 0 5
T c 4 0 6 6 B P
o r H D 1 4 O 6 6 B
o r M B 8 4 O 6 6 B M
Q l O l , l O 4 - l O B
O 2 O l , 2 O 4 - 2 O 8 , 3 O T
2 5 C r 8 1 5
o r 2 S C l 7 4 O L N
o r 2 5 C 2 6 3 4 N C
Q l o 2 , 1 O 3 , 2 O 2 , 2 O 3
? s c 2 2 4 0
Q 3 O 3 , 3 O 8 , 3 O 9 , 3 t O
2 S A t O t 5
o r 2 S A 9 3 3 L N
o r 2 S A l 1 2 7 N C
Q 3 O 4 , 3 O 5 , 3 0 6
? s c 2 0 6 0
o r 2 5 C 2 6 7 3
o r ? S C l 3 8 3 N C
Q 3 . f 1 , 3 1 ? , 3 1 3
2 5 C 1 7 4 0
o r 2 S C ' l 7 4 O L N
l.'
D 3 0 1 , 3 o 2 , 3 0 4 ,
D 3 O 8 , 3 O 9 , 3 1 O , 3 t g
I s R 3 5 - t O O A
D 303, 305, 306, 307
D 3 l I - 3 1 7
15247 3 or US tO4O
o3t9 .rsR35-{OO
2 D 3 0 1
W Z - t 3 5
2 D 3 0 2
g z - 1 3 5
2D303
BZ-O5o
2 0 3 0 4
w z - o 4 4
I . R E S I S T O R S :
I n d , c a t e d
i n Q , ' A W ,
M : M a , ( F ) : t 1 % , I
2 . C A P A C I T O R S :
I n d c a t e d
i n c a p a c i t l
I n d l c a t i o n
w i t h o u t
3 . V O L T A G E ,
C U R R E
\_]
, DC voltage I
f , -
m A :
D C c u r r e n t i
4 . O T H E R S :
{
S i g n a l r o u t e .
@
A d l u s t i n g
p o i n t .
T r r e
A
m a r k
f o u n
portance
of the safet
b e s u r e t o u s e p a r t s o
l(
marked
capacito
T h i s i s t h e b a s i c s c h
D I C A T O R A s s ' y ( 1 / 2 ,
R \
I C 6 0 l , 6 0 2
L E D 6 O I , 6 O
L E D 6 0 3 , 6 0
L E D 6 0 4
!
I
;,.l
, i !
rlJ I
)R Ass'y I
:'_i
t l
! i i
R Ass'y I
E )
|
Q 3 0 3
P O W E R O F F M U T E
S E N S O R A s s ' y
l----,;,"*";;--l
t
l
L
_
_
l
I N D I C A T O R A s s ' y ( 2 / 2 )
1 " J : 1 : 1
6
5
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