Higher Performance; Improved Reliability - HP 226824-001 - ProLiant - ML750 Introduction Manual

Fully-buffered dimm technology
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Higher performance

The asynchronous serial links between the memory controller and AMB enable higher performance by
the memory subsystem. The two devices operate on independent clocks, so the transmitting device
embeds a bit clock with the data stream. The bit clock consists of a start bit that indicates the
beginning of a chunk of information, or data word, and a stop bit that indicates the end of the data
word. This eliminates skew between the clock and the data—an issue with parallel interfaces—and
allows very high data rates to be achieved.
As described previously, the outbound links exhibit one-half the peak theoretical throughput of the
inbound links. For FB-DIMMS with DDR2-533 DRAM devices, the outbound links have a theoretical
throughput of 2.1 GB/sec, or approximately one-half of 4.3-GB/s inbound links (Figure 6). Because
the serial links transport write and read data simultaneously, the total theoretical throughput of the FB-
DIMM channel is 6.4 GB/s (2.1 GB/s plus 4.3 GB/s). When using DDR2-667 DRAM, the total
theoretical throughput of the FB-DIMM channel is 8.0 GB/s (2.7 GB/s plus 5.3 GB/s)
Figure 6. Theoretical throughput of the FB-DIMM channel

Improved reliability

FB-DIMM technology improves reliability through extended use of ECC and the introduction of a new
fail-over mechanism. FB-DIMMs extend the use of ECC to protect commands and address information
in the event of a soft error. This feature can help reduce instances where the soft error could disrupt
server performance and reliability. A second data protection mechanism called "bit lane fail-over"
correction identifies a bad data path and removes it from service.
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