Philips Semiconductors
VHF push-pull power MOS transistor
BLF278 scattering parameters
V
= 50 V; I
= 500 mA; note 1
DS
D
f (MHz)
|s
|
11
5
0.87
10
0.88
20
0.88
30
0.88
40
0.89
50
0.91
60
0.92
70
0.93
80
0.94
90
0.95
100
0.95
125
0.97
150
0.97
175
0.98
200
0.98
250
0.99
300
0.99
350
0.99
400
0.99
450
0.99
500
0.99
600
0.99
700
0.99
800
0.99
900
0.99
1000
0.99
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.
2003 Sep 19
s
11
|s
|
21
142.1
60.05
159.8
32.09
169.0
15.70
171.2
9.98
172.2
6.99
172.9
5.24
173.5
4.08
174.1
3.26
174.7
2.66
175.2
2.22
175.7
1.88
176.9
1.27
177.9
0.91
178.7
0.69
179.5
0.54
179.2
0.35
178.1
0.25
177.1
0.19
176.1
0.14
175.1
0.11
174.2
0.09
172.4
0.07
170.7
0.05
168.9
0.04
167.1
0.04
165.2
0.04
s
21
|s
12
104.3
0.00
91.4
0.00
77.3
0.01
68.4
0.01
61.0
0.01
55.0
0.01
49.6
0.01
44.9
0.01
41.0
0.01
37.5
0.00
34.0
0.00
26.8
0.00
22.7
0.00
19.5
0.00
16.0
0.00
12.1
0.01
9.1
0.01
8.2
0.01
7.2
0.01
8.1
0.02
9.7
0.02
14.8
0.02
24.0
0.03
35.6
0.03
46.0
0.04
60.3
0.04
20
s
12
|
|s
19.4
0.83
0.68
167.5
13.4
0.62
3.4
0.64
4.4
0.66
10.3
0.70
15.0
0.74
18.3
0.78
19.8
0.80
19.7
0.83
18.0
0.85
1.9
0.88
35.3
0.91
65.3
0.94
78.0
0.95
86.7
0.96
87.8
0.98
90.3
0.98
91.4
0.99
92.2
0.99
91.5
0.99
91.4
0.99
91.6
0.99
92.5
1.00
93.1
1.00
94.1
1.00
Product Specification
BLF278
s
22
|
22
160.9
165.8
177.6
175.8
171.2
168.1
166.8
166.5
166.5
166.7
167.4
169.4
170.0
170.8
172.4
174.0
175.5
176.5
177.6
178.3
179.2
179.5
178.3
177.1
176.0
175.0