Toshiba TPCS8209 Quick Start Manual

查询TPCS8209供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Lithium Ion Battery Applications
Notebook PC Applications
Portable Machines and Tools
• Small footprint due to small and thin package
• Low drain-source ON resistance: R
• High forward transfer admittance: |Y
• Low leakage current: I
•
Enhancement-mode: V
Maximum Ratings
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
Gate-source voltage
DC
Drain current
Pulse
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s) Single-device value
at dual operation
(Note 2a)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s) Single-device value
at dual operation
(Note 2b)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
Storage temperature range
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
TPCS8209
= 19 mΩ (typ.)
DS (ON)
| = 9.2 S (typ.)
fs
= 10 µA (max) (V
DSS
= 0.5~1.2 V (V = 10 V, I
th DS
(Ta = = = = 25°C)
Symbol
V
DSS
= 20 kΩ)
V
DGR
V
GSS
(Note 1) I
D
(Note 1) I
DP
P
D (1)
P
D (2)
(Note 3b)
P
D (1)
P
D (2)
(Note 3b)
E
AS
(Note 4)
I
AR
E
AR
(Note 2a, 3b, 5)
T
ch
T
stg
= 20 V)
DS
= 200 µA)
D
Rating Unit
20 V
20 V
±12
V
5
A
20
1.1
W
0.75
0.6
W
0.35
32.5 mJ
5 A
0.075 mJ
150 °C
−55~150
°C
1
TPCS8209
JEDEC ―
JEITA ―
TOSHIBA 2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
2002-01-17
Unit: mm