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Panasonic MA4ZD03 Specification Sheet
Panasonic MA4ZD03 Specification Sheet

Panasonic MA4ZD03 Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA4ZD03
Silicon epitaxial planar type
For high speed switching
For small type power supply
For DC/DC converter
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• I
= 100 mA rectification is possible
F
• Optimum for high frequency rectification because of its short re-
verse recovery time (t
rr
■ Absolute Maximum Ratings T
Parameter
Forward current
Single
Double
Peak forward
Single
current
Double
Non-repetitive peak Single
*
forward surge current
Double
Reverse voltage
Repetitive peak reverse voltage
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. * : t
measurement circuit
rr
Publication date: February 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
)
= 25°C
a
Symbol
Rating
I
100
F
75
I
300
FM
225
I
1
FSM
0.75
V
45
R
45
V
RRM
125
T
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I
V
R
V
I
F
F
C
V
t
t
I
rr
F
I
rr
Bias Application Unit N-50BU
A
Pulse Generator
Wave Form Analyzer
(PG-10N)
(SAS-8130)
= 50 Ω
= 50 Ω
R
R
s
i
■ Package
• Code
• Pin Name
■ Marking Symbol: M5A
Unit
■ Internal Connection
mA
mA
A
V
V
°C
°C
Conditions
= 40 V
R
= 100 mA
= 0 V, f = 1 MHz
R
= I
= 100 mA
R
= 10 mA, R
= 100 Ω
L
Input Pulse
t
t
r
p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00110CED
SMini4-F1
1: Anode 1
3: Cathode 2
2: Anode 2
4: Cathode 1
3
4
1
2
Min
Typ
0.54
12
1.2
Output Pulse
t
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Max
Unit
µA
5
0.60
V
18
pF
ns
1

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Summary of Contents for Panasonic MA4ZD03

  • Page 1 This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA4ZD03 Silicon epitaxial planar type For high speed switching For small type power supply For DC/DC converter ■ Features • Two isolated elements are contained in one package, allowing high-density mounting •...
  • Page 2 This product complies with the RoHS Directive (EU 2002/95/EC). MA4ZD03  V = 125°C 75°C 25°C −1 −2 −3 ( V ) Forward voltage V  V = 125°C 75°C 25°C −1 −2 ( V ) Reverse voltage V SKH00110CED ...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.