Download Print this page

Panasonic MA4X726 (MA726) Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

Advertisement

Quick Links

Schottky Barrier Diodes (SBD)
MA4X726
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Two MA3X721 (MA721) is contained in one package (two
diodes in a different direction)
• Forward current (Average) I
possible
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward
Single
current
Series
Forward current
Single
(Average)
Series
Non-repetitive peak Single
* 2
forward surge current
Series
Junction temperature
Storage temperature
Note) * 1: Value of each diode in series diodes used.
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA726)
= 200 mA rectification is
F(AV)
= 25°C
a
Symbol
Rating
V
30
R
V
30
RRM
I
300
FM
* 1
225
I
200
F(AV)
* 1
150
I
1.00
FSM
* 1
0.75
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V
I
F
F
I
V
R
R
C
V
t
R
= I
t
I
rr
F
= 10 mA, R
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
0.60
Unit
V
V
EIAJ: SC-61
mA
Marking Symbol: M1O
mA
Internal Connection
A
°C
°C
Conditions
= 30 V
= 0 V, f = 1 MHz
= 100 mA
R
= 100 Ω
L
4. * : t
measurement circuit
rr
Input Pulse
t
t
r
p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00106CED
+0.02
2.90
–0.05
1.9
±0.2
(0.95)
(0.95)
3
4
0.5R
2
1
(0.2)
+0.10
–0.05
10˚
Mini4-G1 Package
3
4
2
1
Min
Typ
Max
0.55
50
30
3.0
Output Pulse
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.1
0.16
–0.06
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
Unit
V
µA
pF
ns
1

Advertisement

loading

Summary of Contents for Panasonic MA4X726 (MA726)

  • Page 1 Schottky Barrier Diodes (SBD) MA4X726 (MA726) Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X721 (MA721) is contained in one package (two diodes in a different direction) •...
  • Page 2 MA4X726  V 100°C 25°C = 150°C −20°C −1 −2 ( V ) Forward voltage V  T = 30 V −40 ( °C ) Ambient temperature T  V = 150°C 100°C 25°C ( V ) Reverse voltage V ...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

This manual is also suitable for:

Ma726