Schottky Barrier Diodes (SBD)
MA4X726
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Two MA3X721 (MA721) is contained in one package (two
diodes in a different direction)
• Forward current (Average) I
possible
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward
Single
current
Series
Forward current
Single
(Average)
Series
Non-repetitive peak Single
* 2
forward surge current
Series
Junction temperature
Storage temperature
Note) * 1: Value of each diode in series diodes used.
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA726)
= 200 mA rectification is
F(AV)
= 25°C
a
Symbol
Rating
V
30
R
V
30
RRM
I
300
FM
* 1
225
I
200
F(AV)
* 1
150
I
1.00
FSM
* 1
0.75
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V
I
F
F
I
V
R
R
C
V
t
R
= I
t
I
rr
F
= 10 mA, R
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
0.60
Unit
V
V
EIAJ: SC-61
mA
Marking Symbol: M1O
mA
Internal Connection
A
°C
°C
Conditions
= 30 V
= 0 V, f = 1 MHz
= 100 mA
R
= 100 Ω
L
4. * : t
measurement circuit
rr
Input Pulse
t
t
r
p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00106CED
+0.02
2.90
–0.05
1.9
±0.2
(0.95)
(0.95)
3
4
0.5R
2
1
(0.2)
+0.10
–0.05
10˚
Mini4-G1 Package
3
4
2
1
Min
Typ
Max
0.55
50
30
3.0
Output Pulse
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.1
0.16
–0.06
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
Unit
V
µA
pF
ns
1