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Panasonic 2SD1149 Specification Sheet page 2

Silicon npn epitaxial planar type transistors

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2SD1149
 T
P
C
a
240
200
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
100
10
1
= 75°C
T
25°C
a
0.1
−25°C
0.01
0.1
1
10
Collector current I
 V
C
ob
CB
6
5
4
3
2
1
0
1
10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
80
60
40
20
0
120
160
0
( °C )
Collector-emitter voltage V
a
C
1 800
= 10
I
/ I
C
B
1 500
1 200
900
600
300
0
0.1
100
( mA )
C
100
= 0
I
V
E
CE
f = 1 MHz
= 80 dB
G
V
= 25°C
Function = FLAT
T
a
= 25°C
T
a
80
60
40
20
0
100
0.01
( V )
CB
 V
I
C
CE
= 25°C
T
a
= 100 µA
I
B
80 µA
60 µA
50 µA
40 µA
30 µA
20 µA
10 µA
2
4
6
8
10
12
( V )
CE
 I
h
FE
C
= 10 V
V
CE
= 75°C
T
a
25°C
−25°C
1
10
100
( mA )
Collector current I
C
NV  I
C
= 10 V
= 100 kΩ
R
g
22 kΩ
5 kΩ
0.1
1
( mA )
Collector current I
C
SJC00208BED
 V
I
C
BE
60
V
CE
25°C
50
= 75°C
−25°C
T
a
40
30
20
10
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V
BE
 I
f
T
E
200
V
CB
= 25°C
T
a
160
120
80
40
0
− 0.1
−1
−10
( mA )
Emitter current I
E
NV  V
CE
100
= 100 kΩ
R
g
80
60
22 kΩ
40
5 kΩ
20
= 1 mA
I
C
= 80 dB
G
V
Function = FLAT
= 25°C
T
a
0
1
10
Collector-emitter voltage V
= 10 V
2.0
( V )
= 10 V
−100
100
( V )
CE

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