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- Page 1 INTEGRATED CIRCUITS TDA5360 Pre–Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Objective specification, Revision 2.2 1998 Jul 30...
- Page 2 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads FEATURES APPLICATIONS QUICK REFERENCE DATA DESCRIPTION ORDERING INFORMATION BLOCK DIAGRAM PINOUT DIAGRAM PIN DESCRIPTIONS FUNCTIONAL DESCRIPTION ACTIVE READ MODE ACTIVE WRITE MODE ACTIVE STW MODE STANDBY MODE...
- Page 3 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads FEATURES 12 channels design for Single-stripe (SAL and GMR) Read / Thin-film Write heads. Design target 350 Mbps, for d=0 (16 / 17) rate code. Differential Hybrid sense Reader architecture.
- Page 4 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads QUICK REFERENCE DATA SYMBOL PARAMETER DC Supply voltage Noise Figure IRNV Input Referred Noise Voltage Differential gain -3dB frequency bandwidth Common Mode Rejection Power Supply Rejection Write Current Rise/Fall times (-0.8 * Iwr =>...
- Page 5 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads DESCRIPTION The +/- 5.0 volt pre-amplifier for HDD described here has been designed for 12 terminals, comprised of a SAL or GMR magneto-resistive reader and an inductive thin film writer. In read mode, the device operates as a low noise differential preamplifier which senses resistance changes in the MR element that correspond to flux changes on the disk.
- Page 6 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads BLOCK DIAGRAM hybrid sense TA handling Rin:2bits hybrid sense TA handling Rin:2bits voltage driven voltage driven 1998 July 30 Objective Specification, Revision 2.2 On/Off d/dt 4 bits 3bits 1.5 bit...
- Page 7 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads PAD ARRANGEMENT BFAST SDATA SCLK SHIELDN SHIELDP REXT Fig.2 TDA5360 pad arrangement pads up. 1998 July 30 Objective Specification, Revision 2.2 TDA5360...
- Page 8 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads PAD DESCRIPTION SYMBOL RDP,RDN output logic input WDP,WDN input output input REXT logic input SCLK logic input SDATA logic input/output BFAST logic input logic input RP0...RP11 input RN0...RN11...
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Page 9: Functional Description
Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads FUNCTIONAL DESCRIPTION Active READ mode Taking RWN high and programming bits MODE0 and MODE1 (see Reg.09) selects the read mode. The Head select inputs, in serial register, select the appropriate head. - Page 10 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Active WRITE mode Taking RWN low from an Active READ mode selects the Active WRITE mode. The head select inputs, in a serial register, select the appropriate head.
- Page 11 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads SLEEP mode The sleep mode is selected by programming bits MODE0 and MODE1. (see Reg.09) In Sleep Mode, the IC is accessible via the Serial Interface. All circuits, other than those of the CMOS Serial Interface and the circuit which forces the data registers to their default values at power up and which fixes the DC level of RDp- RDn (required when operating with more than one amplifier), are inactive.
- Page 12 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10 BIASING OF THE MR ELEMENT This preamplifier has been designed for SAL and GMR elements. Programming bit GMR in Reg. 01 select either a SAL range (LOW) or a GMR range (HIGH).
- Page 13 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.2 Fault Mode Fault conditions are indicated on the FLT pin (HIGH during write mode and LOW during read mode). The fault condition is coded and stored in Reg. 07 for monitoring purposes. The fault code is cleared on power up, on system reset and on writing to Reg.09...
- Page 14 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads The following are valid READ fault conditions which set FLT=LOW Rext pin open or shorted to GND or Vcc Thermal Asperity detected Read Head open Power supplies too low (VCC and/or VEE) Write current present in read mode Illegal head address ( i.e.
- Page 15 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.3 Serial Interface Address bit Allocation Register 10.4 Serial Interface Register bit Allocation Register PORI DUMMY PWR4 HFZ3 HFZ2 TRANGE VEND7 VEND6 FLT2 1998 July 30 SELT...
- Page 16 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.5 Serial Interface Operations The serial interface communication consists of an adress word of 8 bits followed by a data word of 8 bits. See section 11, page 24 and 25 for timing diagrams.
- Page 17 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.6 Registers description Register Name Contents Head Select Register HS3..HS0 = 0,0,0,0 to 1,0,1,1 = H0 to H11 SELT : if HIGH, the multiple selection detector is enabled. Inactive in STW mode...
- Page 18 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Reader Bandwith HFZ3, HFZ2, HFZ1, HFZ0 = high frequency gain boost/ differentiator control Register ( Note 3 ) LFP1, LFP0 = low frequency pole. (0,0) =1 MHz...
- Page 19 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Measurement Register M4...M0 = 5 bits for Rmr/Temperature digitazation (read back only bits) RANGE1,RANGE0 = 2bits to define which measurement to be done (0,0) (0,1) and (1,0) :...
- Page 20 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Note 0 : MDS (Multiple Device Selected) detector : When several preamps are connected in parallel, this function allows the user detection of wrong adressing withing the preamps.
- Page 21 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Formula to link real TAD threshold with LF pole of the reader and programmed input impedance : where : fLFP is the low frequency pole of the read amplifer (1 to 4 MHz, programmable via Reg. 03) fTA is the frequency of the principal harmonic of the TA signal.
- Page 22 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads - Temperature digitizer This measurement can be done either in Active Read mode or in Active Write mode. Note 9a : RSTDMY define DRN pin functionality RSTDMY...
- Page 23 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads The aim of the TAC is to limit the amplitude and the duration of the perturbation seen at the reader output. Because thermal asperity amplitude is not constant, the TAC need some threshold programmation to define the sharpness of the response.
- Page 24 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 11 SERIAL INTERFACE TIMING t > 5ns 1 Tclk a0=1 Address When Fclk > 20 MHz and a register reading is performed, it is necessary to extend the clock period as above When Fclk <...
- Page 25 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads t_sen_sen trsen_sclk SCLK SDATA SEN timing Description tr_sen_sclk 90% of SEN to 10% of SCLK tf_sclk_sen last SCLK to 90% of SEN tr,tf rise/fall time 10%-90% t_sen_sen...
- Page 26 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 12 ELECTRICAL PARAMETERS 12.1 DC Characteristics Unless otherwise specified, recommended operating conditions apply CS0=CS1=LOW, DRN=HIGH, BFAST=LOW, STWn=HIGH, RIN=18 Ohm, LFP = 1MHz, Imr = 8mA, Rmr = 66 Ohm Iwr = 30.8mA.
- Page 27 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Voltage compliance for WDP and WDN in current mode Fault Threshold CCTL Fault Threshold EETL 12.2 Read Characteristics Unless otherwise specified, recommended operating conditions apply. SYMBOL PARAMETER...
- Page 28 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Differential Input Capacitance Differential Input Resistance Dynamic Range Common Mode Rejection Power Supply Rejection from a signal on V logic pin, to R Channel Separation V OS...
- Page 29 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 12.3 Write Charateristics Unless otherwise specified, recommended operating conditions apply, I W =50mA, L H =75nH, R H = 10 , f DATA =5MHz, Ambient temperature. SYMBOL...
- Page 30 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 12.4 Switching Characteristics Unless otherwise specified, recommended operating conditions apply PARAMETER Serial Interface timing R/WN to Write Mode SEN to Write Mode R/WN to Read Mode CS to Read Mode...
- Page 31 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 5. The noise figure is defined as : NF[dB] = 10xlog[(Vnout/Av) where Av is the gain and Vnout is the noise voltage at the output of the amplifier 6.
- Page 32 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 13 LIMITING VALUES / RECOMMENDED OPERATION CONDITIONS In accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER Positive Supply voltage range Negative Supply voltage range High level CMOS input...
- Page 33 Philips Semiconductors Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Notes 1. A supply by-pass capacitor from V 2. A supply by-pass capacitor from V 14 ABSOLUTE MAXIMUM RATINGS SYMBOL Positive supply voltage Negative supply voltage Digital input voltage...
- Page 34 Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.