Transistors
2SC5846
Silicon NPN epitaxial planar type
For general amplification
■ Features
High forward current transfer ratio h
SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
25 C
a
Symbol
Rating
V
60
CBO
V
50
CEO
V
7
EBO
I
100
C
I
200
CP
P
100
C
T
125
j
T
55 to 125
stg
25 C
3 C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
10
EBO
E
I
V
CBO
CB
I
V
CEO
CE
h
V
FE
CE
V
I
CE(sat)
C
C
V
ob
CB
f
V
T
CB
SJC00298AED
0.23
Unit
V
V
V
mA
mA
mW
Marking Symbol: 7K
C
C
Conditions
10
, I
0
E
2 mA, I
0
B
, I
0
C
20 V, I
0
E
10 V, I
0
B
10 V, I
2 mA
C
100 mA, I
10 mA
B
10 V, I
0, f
1 MHz
E
10 V, I
2 mA, f = 200 MHz
E
SSSMini3-F1 Package
+0.05
0.33
0.10
–0.02
3
1
2
+0.05
–0.02
(0.40)
(0.40)
0.80
±0.05
1.20
±0.05
5˚
SSSMini3-F1 Package
Min
Typ
Max
60
50
7
0.1
100
180
390
0.1
0.3
2.2
100
Unit: mm
+0.05
–0.02
1: Base
2: Emitter
3: Collector
Unit
V
V
V
A
A
V
pF
MHz
1