Schottky Barrier Diodes (SBD)
MA6J786X
Silicon epitaxial planar type
For high speed switching circuits
Overview
MA6J786X is optimal for general circuit supplies.
The assembly of 3 MA3X786 elements in parallel in one package.
Features
Forward current (Average) I
F(AV)
Short reverse recovery time t
Low forward voltage V
and good rectification efficiency
F
Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current
from the operating equipment.
3. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Publication date: August 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 100 mA rectification is possible
, optimum for high-frequency rectification
rr
= 25°C
a
Symbol
Rating
V
30
R
V
30
RM
I
100
F(AV)
I
300
FM
*
I
1
FSM
T
125
j
T
-55 to +125
stg
= 25°C±3°C
a
Symbol
V
I
= 100 mA
F1
F
I
V
= 30 V
R
R
C
V
= 0, f = 1 MHz
t
R
I
= I
F
t
rr
R
= 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Package
Code
SMini6-F1
Pin Name
Marking Symbol: M8B
Unit
V
Internal Connection
V
mA
mA
A
°C
°C
Conditions
= 100 mA, I
= 0.1 × I
,
R
rr
R
Input Pulse
t
t
r
p
t
10%
90%
V
R
t
= 2 µs
p
t
= 0.35 ns
r
δ = 0.05
SKH00226BED
1: Anode 1
4: Cathode 3
2: Anode 2
5: Cathode 2
3: Anode 3
6: Cathode 1
(C1)
(C2)
(C3)
6
5
4
1
2
3
(A1)
(A2)
(A3)
Min
Typ
Max
0.55
15
20
1.0
Output Pulse
t
rr
I
F
t
I
= 10 mA
rr
I
= I
= 100 mA
F
R
R
= 100 Ω
L
Unit
V
mA
pF
ns
1