Panasonic MA2YJ50 Specification Sheet

Schottky Barrier Diodes (SBD)
MA2YJ50
Silicon epitaxial planar type
For rectification
 Features
 Forward current (Average) I
F(AV)
 Low forward voltage V : 0.55 V (max.)
F
 Absolute Maximum Ratings T
Parameter
Reverse voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Lead temperature: Tl = 60°C, DC wave on
* 2: Rectangle wave 1 cycle (Pulse width = 50 ms, non-repetitive peak current)
* 3: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Thermal resistance (j-a)
Thermal resistance (j-l)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: November 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 3.0 A rectification is possible.
= 25°C
a
Symbol Rating
V 40
R
I 3.0
F(AV)
* 2
50
I
FSM
* 3
15
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 1.0 A
F1 F
V I = 3.0 A
F2 F
I V = 40 V
R R
C V = 10 V, f = 1 MHz
t R
I = I
F R
t
rr
R = 100 W
L
Mounted on an alumina PC board
R
th(j-a)
Mounted on a glass epoxy PC board
R
th(j-l)
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
SKH00238AED
 Package
 Code
Mini2-F1
 Pin Name
1: Anode
2: Cathode
Unit
V
 Marking Symbol: 3D
A
A
A
°C
°C
Conditions
= 100 mA, I = 10 mA,
rr
Input Pulse
t
t
r p
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
Min Typ Max
0.35 0.44
0.47 0.55
40 200
70
25
110
160
60
Output Pulse
t
I rr
F
t
I = 10 mA
rr
I = I = 100 mA
F R
R = 100 Ω
L
Unit
V
mA
pF
ns
°C/W
°C/W
1