Panasonic MA2J1120G Specification Sheet

Switching Diodes
MA2J1120G
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Ensuring the forward current (Average) capacity I
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
* 2
surge current
Junction temperature
Storage temperature
Note) * 1: With a printed-circuit board
* 2: t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 40
R
V 40
RM
* 1
I 200
F(AV)
I 600
FM
I 1
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R1
I V
R2
I V
R3
C V
t
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
= 200 mA
F(AV)
• Pin Name
■ Marking Symbol: 1C
Unit
V
V
mA
mA
A
°C
°C
Conditions
= 200 mA
= 15 V
R
= 35 V
R
= 35 V, T = 100°C
R a
= 0 V, f = 1 MHz
R
= 10 mA, V = 6 V
R
= 0.1 I = 100 Ω
, R
R L
Input Pulse
t
t
r p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00073AED
SMini2-F3
1: Anode
2: Cathode
Min Typ
Output Pulse
t
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Max Unit
1.1 V
50 nA
500
µA
100
4 pF
10 ns
1