Schottky Barrier Diodes (SBD)
MA24D51
Silicon epitaxial planar type
For rectifi cation
Features
Features
Allowing low-profi le mounting
Allowing low-profi le mounting
Forward current (Average) I
Forward current (Average) I
F(A V)
Low forward voltage V
Low forward voltage V
Low forward voltage V
Low forward voltage V
F
F
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Thermal resistance (j-a)
*
Thermal resistance (j-l)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : Mounted on an alumina PC board
Publication date: September 2006
This product complies with the RoHS Directive (EU 2002/95/EC).
= 3 A rectifi cation is possible
T
= 25
= 25
°C
a
a
a
Symbol
Rating
V
40
R
V
V
V
40
RM
RM
I
3.0
F(A V)
* 2
I
60
FSM
T
T
T
150
j
j
T
T
T
–40 to +150
stg
stg
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
V
V
I
= 3.0 A
F
F
F
I
V
= 40 V
= 40 V
R
R
R
R
R
R
R
th(j-a)
th(j-a)
R
R
R
th(j-l)
th(j-l)
SKH00154AED
2.40
±0.10
1
2
Unit
1.75
±0.05
V
5°
V
A
A
°C
1: Anode
°C
2: Cathode
Marking Symbol: 5S
Conditions
Min
Unit: mm
0.15
±0.05
TMiniP2-F1 Package
Typ
Max
Unit
0.37
0.42
V
2
mA
60
°C/W
10
°C/W
1