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Panasonic MA4X713 (MA713) Specification Sheet
Panasonic MA4X713 (MA713) Specification Sheet

Panasonic MA4X713 (MA713) Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA4X713
Silicon epitaxial planar type
For switching
For wave detection
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
• Forward voltage V
, optimum for low voltage rectification
F
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Peak forward
Single
current
Double
Forward current
Single
Double
Junction temperature
Storage temperature
Note) * : Value of each diode in double diodes used.
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA713)
rr
= 25°C
a
Symbol
Rating
V
30
R
V
30
RM
I
150
FM
*
110
I
30
F
*
20
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R
C
V
t
t
I
rr
F
I
rr
η
V
R
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part number in the parenthesis shows conventional part number.
i
0.60
Unit
V
EIAJ: SC-61
V
Marking Symbol: M1N
mA
Internal Connection
mA
°C
°C
Conditions
= 1 mA
= 30 mA
= 30 V
R
= 1 V, f = 1 MHz
R
= I
= 10 mA
R
= 1 mA, R
= 100 Ω
L
= 3 V
, f = 30 MHz
in
(peak)
= 3.9 kΩ, C
= 10 pF
L
4. * : t
measurement circuit
rr
Input Pulse
t
t
r
p
t
10%
I
F
90%
V
R
= 2 µs
t
I
p
= 0.35 ns
t
I
r
δ = 0.05
R
SKH00103BED
+0.02
2.90
–0.05
1.9
±0.2
(0.95)
(0.95)
3
4
0.5R
2
1
(0.2)
+0.10
–0.05
10˚
Mini4-G1 Package
3
4
2
1
Min
Typ
1.5
1.0
65
Output Pulse
t
rr
t
= 1 mA
I
rr
= 10 mA
F
= 10 mA
R
= 100 Ω
L
Unit: mm
+0.1
0.16
–0.06
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
Max
Unit
0.4
V
1.0
µA
1
pF
ns
%
1

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Summary of Contents for Panasonic MA4X713 (MA713)

  • Page 1 Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection ■ Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) •...
  • Page 2 MA4X713 Characteristics charts between pins 1 and 4, 2 and 3  V 75°C 25°C = 125°C −20°C −1 −2 Forward voltage V ( V )  T = 30 V 15 V −1 −2 −40 ( °C ) Ambient temperature T ...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

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