Panasonic MA3X704D Specification Sheet

Schottky Barrier Diodes (SBD)
MA3X704D
Silicon epitaxial planar type
For switching
For wave detection
■ Features
• Two MA3X704A (MA704A) is contained in one package
• Low forward voltage V
• Small temperature coefficient of forward characteristic
• Small reverse current I
R
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Peak forward current Single
Double
Forward current Single
Double
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA704WA)
and good wave detection efficiency η
F
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 150
FM
110
I 30
F
20
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R R
C V
t R
t I
rr F
I
rr
η
V
IN
R
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part numbers in the parenthesis show conventional part number.
i
, MA3X704E
Unit
EIAJ: SC-59
V
Mini3-G1 Package
V
Marking Symbol
mA
• MA3X704D: M2P • MA3X704E: M2R
Internal Connection
mA
°C
°C
Conditions
= 1 mA
= 30 mA
= 30 V
= 1 V, f = 1 MHz
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V , f = 30 MHz
(peak)
= 3.9 kΩ, C = 10 pF
L
Input Pulse
t
t
r p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00074CED
(MA704WK)
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
MA3X704D MA3X704E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
3
1 2 1
D
Min Typ Max
1.5
1.0
65
Output Pulse
t
rr
I
F
t
= 1 mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
Cathode
3
2
E
Unit
0.4 V
1.0
µA
1
pF
ns
%
1