Panasonic PIN Photodiodes PNZ334 (PN334) Specification Sheet

PIN Photodiodes
PNZ334
(PN334)
Silicon planar type
For optical control systems
 Features
 Plastic type package (φ5)
 High coupling capabillity suitable for plastic fiber
 High quantum efficiency
 High-speed response
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
 Electrical-Optical Characteristics T
Parameter
* 1
Photocurrent
Drain current
Terminal capacitance
Peak sensitivity wavelength
Half-power angle
* 2
Rise time
* 2
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. * 1: Source: Tungsten lamp (color temperature 2 856K)
* 2: Switching time measurement circuit
λ
P
Publication date: January 2009
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
V
R
P
D
T
opr
T
stg
= 25°C±3°C
a
Symbol
I
L
I
D
C
t
λ
PD
θ
t
r
t
f
Sig. in V
R
= 900 nm
Sig. out
50 Ω R
L
Rating Unit
30 V
100 mW
–25 to +85 °C
–30 to +100
°C
Conditions
V = 10 V, L = 1 000 lx
R
V = 10 V
R
V = 0 V, f = 1 MHz
R
V = 10 V
R
The angle when the photocurrent is
halved
V = 10 V, R = 50 W
R L
(Input pulse)
(Output pulse)
t t
r f
Note) The part number in the parenthesis shows conventional part number.
SHE00042DED
Min Typ Max
5.0 7.0
0.1 10
6
850
70
2
2
t : Rise time
r
:
t Fall time
90%
f
10%
Unit
µA
nA
pF
nm
°
ns
ns
1